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DMS3019SSD
Electrical Characteristics – Q1 @ T A = 25°C unless otherwise stated
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
30
-
-
-
-
-
-
0.1
±100
V
mA
nA
V GS = 0V, I D = 1mA
V DS = 30V, V GS = 0V
V GS = ±12V, V DS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V GS(th)
R DS (ON)
|Y fs |
V SD
1.0
-
-
-
-
10
12
5
0.4
2.4
15
18
-
1
V
m Ω
S
V
V DS = V GS , I D = 250 μ A
V GS = 10V, I D = 9A
V GS = 4.5V, I D = 7A
V DS = 5V, I D = 9A
V GS = 0V, I S = 1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V GS = 4.5V)
Total Gate Charge (V GS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
R g
Q g
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
-
-
-
-
-
-
-
-
-
-
-
-
1932
154
121
2.7
18.1
42.0
4.5
4.0
6.16
7.22
36.76
5.38
-
-
-
-
-
-
-
-
-
-
-
-
pF
Ω
nC
ns
V DS = 15V, V GS = 0V,
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1MHz
V DS = 15V, V GS = 4.5V, I D = 9A
V DS = 15V, V GS = 10V, I D = 9A
V GS = 10V, V DS = 15V,
R G = 3 ? , R L = 1.7 ?
Notes:
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
30
V GS = 4.5V
30
25
V GS = 4.0V
25
V DS = 5V
V GS = 3.5V
20
15
V GS = 3.0V
20
15
10
V GS = 2.5V
10
V GS = 150°C
V GS = 125°C
5
5
V GS = 85°C
V GS = 25°C
0
V GS = 2.0V
V GS = 2.2V
0
V GS = -55°C
0
0.5 1 1.5
2
0
0.5
1 1.5 2 2.5
3
V DS , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
V GS , GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
DMS3019SSD
Document number: DS35053 Rev. 2 - 2
3 of 10
www.diodes.com
October 2010
? Diodes Incorporated
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